Professor, Electrical and Computer Engineering
| a.anwar@uconn.edu | |
| Mailing Address | Electrical and Computer Engineering 371 Fairfield Way U-4157 Storrs, Connecticut 06269-4157 |
| Campus | Storrs |
| Google Scholar Link | |
Brief Bio
Dr. Mehdi Anwar currently serves as a Full Professor in the Electrical and Computer Engineering department. He is the Director of the NSF funded Industry University Cooperative Research Center. He has also served as the Associate Dean for Research & Graduate Education of the School of Engineering, University of Connecticut from June 2006 till May 2009. He served as the founding Director of the Department of Homeland Security Center of Excellence from June 2007 till May 2009. Moreover, he was the interim Director of the Connecticut Global Fuel Cell Center serving from June 2007 till January 2009. He served as the interim Department Head of ECE from June 1999 – August 2001.
- Carrier localization in one-dimensional structures,
- transport in semiconductor devices;
- impurity diagnostics in quantum well structures and Silicon nanowires;
- Sb-based type-II infrared detectors;
- noise in semiconductor devices;
- power performance of GaN-based HFETs and circuits;
- metamorphic HEMTs, high power quantum cascade lasers.
| Transmission line analogy of resonance tunneling phenomena: The generalized impedance concept
AN Khondker, MR Khan, AFM Anwar
Journal of applied physics 63 (10), 5191-5193
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| Temperature dependent transport properties in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N semiconductors
AFM Anwar, S Wu, RT Webster
IEEE Transactions on Electron devices 48 (3), 567-572
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| Calculation of the traversal time in resonant tunneling devices
AFM Anwar, AN Khondker, MR Khan
Journal of applied physics 65 (7), 2761-2765
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| Memristor PUF—A security primitive: Theory and experiment
A Mazady, MT Rahman, D Forte, M Anwar
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2 …
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| Bias induced strain in AlGaN∕ GaN heterojunction field effect transistors and its implications
AFM Anwar, RT Webster, KV Smith
Applied physics letters 88 (20)
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| Terahertz characterization of electronic components and comparison of terahertz imaging with x-ray imaging techniques
K Ahi, N Asadizanjani, S Shahbazmohamadi, M Tehranipoor, M Anwar
Terahertz physics, devices, and systems IX: advanced applications in …
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| Advanced terahertz techniques for quality control and counterfeit detection
K Ahi, M Anwar
Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry …
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| Impact ionization in InAlAs/InGaAs/InAlAs HEMT's
RT Webster, S Wu, AFM Anwar
IEEE Electron Device Letters 21 (5), 193-195
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| Developing terahertz imaging equation and enhancement of the resolution of terahertz images using deconvolution
K Ahi, M Anwar
Terahertz physics, devices, and systems X: advanced applications in industry …
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| Study of temperature, air dew point temperature and reactant flow effects on proton exchange membrane fuel cell performances using electrochemical spectroscopy and voltammetry …
S Wasterlain, D Candusso, D Hissel, F Harel, P Bergman, P Menard, ...
Journal of Power Sources 195 (4), 984-993
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| AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics
EW Faraclas, AFM Anwar
Solid-state electronics 50 (6), 1051-1056
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| A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series
A Ahmed, SS Islam, AFM Anwar
IEEE Transactions on Microwave Theory and Techniques 49 (9), 1518-1524
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| High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films
L Adnane, F Dirisaglik, A Cywar, K Cil, Y Zhu, C Lam, AFM Anwar, ...
Journal of Applied Physics 122 (12)
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| Memristor: Part I—The underlying physics and conduction mechanism
A Mazady, M Anwar
IEEE Transactions on electron devices 61 (4), 1054-1061
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| Insulated gate silicon nanowire transistor and method of manufacture
AF Anwar, RT Webster
US Patent 7,700,419
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| Self-heating and trapping effects on the RF performance of GaN MESFETs
SS Islam, AFM Anwar
IEEE Transactions on Microwave Theory and Techniques 52 (4), 1229-1236
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| Modeling of terahertz images based on x-ray images: a novel approach for verification of terahertz images and identification of objects with fine details beyond terahertz …
K Ahi, M Anwar
Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry …
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| Schottky barrier height in GaN/AlGaN heterostructures
AFM Anwar, EW Faraclas
Solid-state electronics 50 (6), 1041-1045
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| Electron escape time from single quantum wells
KR Lefebvre, AFM Anwar
IEEE journal of quantum electronics 33 (2), 187-191
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| Temperature-dependent nonlinearities in GaN/AlGaN HEMTs
SS Islam, AFM Anwar
IEEE Transactions on Electron Devices 49 (5), 710-717
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